作者：Xiaoyan Mu, Aiting Gao, Dehui Wang, and Peng Yang
關鍵字：Self-Assembled Monolayers; Lithography; Gold; Surfaces; Photooxidation
論文來源：期刊
具體來源：Langmuir
發表時間：2015年
Self-assembled monolayers (SAMs) have been widely employed as etching resists in wet lithography systems to form the patterns in which the ordered molecular packing of the SAM regions significantly delays the etchant attack. A generally accepted recognition is that the SAMs ability to resist etching is positively correlated to the quality of the surface-assembled structures, and a more ordered molecular packing would correspond to a better etching resistance. Such a classical belief is debated in the present work by providing an alternative SAM-assisted negative lithography where ordered SAM regions are etched more quickly than their disordered counterparts. This method features a unique photoirradiation-imprinted patterning process that simply consists of two steps: 1) UV irradiation on an OH-terminated SAM-modified gold surface through a photomask; 2) the subsequent immersion of the exposed substrate in an aqueous etching solution of N-bromosuccinimide/pyridine to develop a wet lithographic pattern. The entire experimental process reveals a finding from previous work that the etching rate on the UV-exposed regions with disordered molecular packing could be modulated to be slower than that on the unexposed well-defined SAM regions. Longer irradiation times would also revert the patterns from negative to positive. Thus, by merely using one kind of SAM-modified surface to provide both positive and negative micropatterns on gold layers, one could obtain flexible opportunities for high-resolution micro/nanofabrication resembling photolithography.