作者：Ming Ma, Qingzhong Xue (*), Huijuan Chen, Xiaoyan Zhou, Dan Xia, Cheng Lv, and Jie Xie
關鍵字：Pd doped amorphous carbon film
論文來源：期刊
具體來源：APPLIED PHYSICS LETTERS 97, 061902, 2010
發表時間：2010年
The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO2 layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO2 / Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm2 at room temperature, the a-C:Pd/SiO2 / Si solar cell fabricated at 350 °C has a high
power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp2-bonded carbon clusters in the carbon film caused by the high temperature deposition.