Sn-doped V2O5 film with enhanced lithium storage performance. Journal of Physical Chemistry C, 2013, DOI: 10.1021/jp406927m
作者：Yanwei Li, Jinhuan Yao, Evan Uchaker, Ming Zhang, Jianjun Tian, Xiaoyan Liu, and Guozhong Cao*
關鍵字：V2O5, Thin film, Lithium ion storage performance
論文來源：期刊
具體來源：http://pubs.acs.org/doi/abs/10.1021/jp406927m
發表時間：2013年
Homogeneous
Sn-doped V2O5 sol was prepared by sol-gel method with H2O2,
V2O5, and SnCl4?5H2O
as precursors and the films were fabricated by drop-casting, drying at ambient,
and then annealing at 450 °C
in air for 2 hours. X-ray photoelectron spectroscopy (XPS) reveals that the
Sn-doped V2O5 film contains 10% V4+, likely compensates
with the
accommodation of Sn4+ ions. Electrochemical and lithium-ion intercalation
properties of both the pure and Sn-doped V2O5 films are
systematically studied by means of cyclic voltammetry (CV), electrochemical
impedance spectroscopy (EIS), and chronopotentiometry (CP) tests. The Sn-doped V2O5
film shows much enhanced lithium-ion storage capacity, faster kinetics, and improved cyclic
stability in comparison with pure V2O5 film. For example,
after 50 cycles, the specific capacity of the Sn-doped V2O5
film retains 334 mAh g?1 with a current density of 500 mA g?1,
much higher than 157 mAh g?1 of the pure V2O5
film. Sn-doping is found to reduce the electrochemical reaction resistance,
increase the electrochemical reaction reversibility, and enhance the
lithium-ion diffusivity. The possible explanation for such significant
enhancement in lithium-ion intercalation capacity and cyclic stability of the
Sn-doped V2O5 film is discussed.