Bo Zhao, Zhonglei Ma*, Yuyao Sun, Yixuan Han and Junwei Gu*. Flexible and Robust Ti3C2Tx/(ANF@FeNi) Composite Films with Outstanding Electromagnetic Interference Shielding and Electrothermal Conversion Performances. Small Structures, 2022, 3(10): 202200162. 2021IF= 11.343.（1區材料科學Top期刊）https://onlinelibrary.wiley.com/doi/10.1002/sstr.202200162
Abstract
Flexible and robust multifunctional electromagnetic interference (EMI) shielding materials are playing an increasingly important role in areas of aerospace, electronic communication, artificial intelligence and wearable electronic devices. In this work, the magnetic and conductive Ti3C2Tx/(ANF@FeNi) EMI shielding composite films are fabricated via the in-situ growth and vacuum assisted filtration methods. The introduction of magnetic FeNi nanoparticles can effectively enhance the electromagnetic recombination losses, leading to the improved electromagnetic interference shielding effectiveness (EMI SE) of the composite films. The obtained Ti3C2Tx/(ANF@FeNi) composite films show excellent EMI shielding and electrothermal conversion performances. When the mass fraction of Ti3C2Tx and FeNi fillers is 60 wt% and their mass ratio is 4:1, the EMI SE of the composite films (50 μm) reaches 60.7 dB in X-band (8.2-12.4 GHz). When applied a low voltage of 3 V, the surface heating temperature of the composite films quickly reaches 111.2°C. Moreover, the composite films possess a satisfied long-term heating stability under the constant applied voltage. In addition, the composite films exhibit excellent thermal conductivity and mechanical properties.The thermal conductivity (λ) and thermal diffusivity (α) reach 4.72 W/(m·K) and 4.36 mm2/s, respectively, and the tensile strength and tensile modulus reach 113.4 MPa and 3.1 GPa, respectively.
高強度且多功能柔性電磁干擾（EMI）屏蔽材料在航空航天、電子通信和人工智能等領域發揮越來越重要的作用。本文采用原位生長法在芳綸納米纖維（ANFs）表面負載FeNi納米合金粒子制備磁性ANF@FeNi，進一步與高導電Ti3C2Tx納米片層復合，借助真空輔助抽濾技術制備磁性導電Ti3C2Tx/（ANF@FeNi）電磁屏蔽復合膜。磁性FeNi納米合金粒子的引入能夠有效增強電磁復合損耗，提升復合膜的電磁屏蔽效能（EMI SE）。Ti3C2Tx/（ANF@FeNi）電磁屏蔽復合膜表現出優異的電磁屏蔽和電熱轉化性能。當Ti3C2TX和FeNi填料質量分數為60 wt%、質量比為4：1時，復合膜（50 μm）在X波段（8.2-12.4 GHz）的EMI SE為60.7 dB。當外施電壓為3 V時，復合膜的表面發熱溫度可以快速達到111.2oC，且在恒定外施電壓下具有良好的長時間發熱穩定性。此外，復合膜還具有突出的導熱和力學性能，其熱導率（λ）和熱擴散率（α）分別為4.72 W/(m·K)和4.36 mm2/s，拉伸強度和拉伸模量分別達到113.4 MPa和3.1 GPa。
本文亮點
1. 采用“原位生長-真空輔助抽濾”法成功制備出磁性導電Ti3C2Tx/（ANF@FeNi）電磁屏蔽復合膜。當Ti3C2TX和FeNi（質量比為4：1時）的質量分數為60 wt%時，復合膜（50 μm）在X波段（8.2-12.4 GHz）的EMI SE達到60.7 dB。
2. Ti3C2Tx/（ANF@FeNi）電磁屏蔽復合膜具有優異的電熱轉化和快速響應特性。當外施電壓為3 V時，復合膜的表面發熱溫度可以快速達到111.2oC且在恒定外施電壓下具有良好的長時間發熱穩定性。
3.Ti3C2Tx/（ANF@FeNi）電磁屏蔽復合膜具有卓越的導熱性能和力學性能。當Ti3C2Tx和FeNi（質量比為4：1時）的質量分數為60 wt%時，復合膜的λ和α分別為4.72 W/(m·K)和4.36 mm2/s，其拉伸強度和拉伸模量也分別達到113.4 MPa和3.1 GPa。
第一作者：趙博
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