82. First-principles study on hexagonal WO3 for HCHO gas sensing application
作者：Bolin Tang, Guohua Jiang*, Wenxing Chen, Junmin Wan.
關(guān)鍵字：semiconductors; surfaces; crystal structure; electronic structure
論文來(lái)源：期刊
具體來(lái)源：Acta Metallurgica Sinica (English Letters)
發(fā)表時(shí)間：2015年
The adsorption energy, electronic structure, density of states (DOS) and electron population for adsorption of HCHO on the hexagonal WO3 (h-WO3) (001) surfaces were investigated by density functional theory (DFT) calculations. The adsorption energy of HCHO molecule on W and O sites of WO-terminated hexagonal WO3 (001) surface were -0.309 eV and -0.432 eV compared with the value at -1.936 eV for HCHO molecule on O-terminated h-WO3 (001) surface. According to the calculated results, the adsorption of HCHO on h-WO3 (001) surface was spontaneous with physical adsorption on WO-terminated h-WO3 (001) surface and chemisorption on O-terminated h-WO3 (001) surface. The charge transfer from adsorbed HCHO molecule to WO3 (001) surface was confirmed by the Mulliken population analysis, which suggested the potential application of hexagonal WO3 for HCHO gas detection.